IPD60R600C6ATMA1 vs IPD65R380E6ATMA1 Comparación
Comparación detallada lado a lado de IPD60R600C6ATMA1 por Infineon y IPD65R380E6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD60R600C6ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C6 | CoolMOS™ E6 |
| Part Suffix | ATMA1 (Tape & Reel) | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | CoolMOS C6 (Superjunction) | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at TC=25°C | 7.3 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) Max at VGS=10V | 600 mΩ | — |
| Total Power Dissipation (Ptot) at TC=25°C | 63 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55 °C to +150 °C |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 (Gate, Drain, Source) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |