IPD60R600C6ATMA1 vs IPD65R380E6ATMA1 Comparison

Detailed side-by-side comparison of IPD60R600C6ATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R600C6ATMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C6 CoolMOS™ E6
Part Suffix ATMA1 (Tape & Reel)
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology CoolMOS C6 (Superjunction) Superjunction (CoolMOS™)
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) Max ±20 V
Continuous Drain Current (ID) at TC=25°C 7.3 A
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
On-Resistance RDS(on) Max at VGS=10V 600 mΩ
Total Power Dissipation (Ptot) at TC=25°C 63 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)]
Operating Temperature Range -55 °C to +150 °C -55 °C to +150 °C
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (Gate, Drain, Source)
RoHS Status Compliant Compliant
MSL Level 1 1
Drain-Source Voltage (V_DS) 650 V
Continuous Drain Current (I_D) at T_C 10.6 A
R_DS(on) max at V_GS=10V 380 mΩ
R_DS(on) test conditions 3.2 A, 10 V
Gate-Source Voltage (V_GS) max ±20 V
Gate Threshold Voltage (V_GS(th)) 3.5 V typ
Gate Charge (Q_G) 39 nC at 10 V
Input Capacitance (C_iss) 710 pF at 100 V
Power Dissipation (P_D) at T_C 83 W

Datasheets & Resources

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