IPD65R380E6ATMA1 vs IPD052N10NF2SATMA1 Comparación
Comparación detallada lado a lado de IPD65R380E6ATMA1 por Infineon y IPD052N10NF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD65R380E6ATMA1 | IPD052N10NF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | MOSFET (Metal Oxide), OptiMOS 5 100V |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | — |
| Encapsulado | PG-TO252-3 (DPAK), surface mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | — |
| Part Number | — | IPD052N10NF2SATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 17 A |
| Continuous Drain Current (ID) at Tc | — | 118 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 150 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 5.2 mΩ @ VGS=10V, ID=70A |
| Gate-Source Threshold Voltage (VGS(th)) Max | — | 3.8 V @ ID=84µA |
| Encapsulado / Carcasa | — | PG-TO252-3 (DPAK, SC-63) |
| Supplier Device Package | — | PG-TO252-3 |
| Temperatura de funcionamiento | — | -55 °C to +175 °C (TJ) |
| Number of Channels | — | 1 |