IPD65R380E6ATMA1 vs IPD052N10NF2SATMA1 对比
详细并排对比 IPD65R380E6ATMA1 出自 Infineon 和 IPD052N10NF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD65R380E6ATMA1 | IPD052N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | MOSFET (Metal Oxide), OptiMOS 5 100V |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| 工作温度范围 | -55 °C to +150 °C | — |
| 封装 | PG-TO252-3 (DPAK), surface mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Part Number | — | IPD052N10NF2SATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 17 A |
| Continuous Drain Current (ID) at Tc | — | 118 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 150 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 5.2 mΩ @ VGS=10V, ID=70A |
| Gate-Source Threshold Voltage (VGS(th)) Max | — | 3.8 V @ ID=84µA |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK, SC-63) |
| Supplier Device Package | — | PG-TO252-3 |
| 工作温度 | — | -55 °C to +175 °C (TJ) |
| Number of Channels | — | 1 |