IPD78CN10NGATMA1 vs BSC098N10NS5ATMA1 Comparación
Comparación detallada lado a lado de IPD78CN10NGATMA1 por Infineon y BSC098N10NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD78CN10NGATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 2 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) Max at Tc=25C | 31 W | — |
| Operating Junction Temperature Max | 175 C | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) + Tab | — |
| Lead Plating | Pb-free (Matte Tin) | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC1 for target application | — |
| Technology | OptiMOS 2 Power-Transistor | OptiMOS 5 (N-channel trench MOSFET) |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: Tj min/max] |
| Encapsulado | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Estado RoHS | — | Compliant |
| Shipping Packaging | — | Tape & Reel (T/R) |