IPD78CN10NGATMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPD78CN10NGATMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPD78CN10NGATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 2 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Tc=25C | 13 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) Max at Tc=25C | 31 W | β |
| Operating Junction Temperature Max | 175 C | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + Tab | β |
| Lead Plating | Pb-free (Matte Tin) | β |
| RoHS Compliance | Compliant | β |
| JEDEC Qualification | Qualified per JEDEC1 for target application | β |
| Technology | OptiMOS 2 Power-Transistor | OptiMOS 5 (N-channel trench MOSFET) |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Operating Temperature Range | β | [DATA_NEEDED: Tj min/max] |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6) |
| RoHS Status | β | Compliant |
| Shipping Packaging | β | Tape & Reel (T/R) |