IPD78CN10NGATMA1 vs BSC098N10NS5ATMA1 Comparaison
Comparaison détaillée côte à côte de IPD78CN10NGATMA1 par Infineon et BSC098N10NS5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPD78CN10NGATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $0,55 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 2 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) Max at Tc=25C | 31 W | — |
| Operating Junction Temperature Max | 175 C | — |
| Boîtier / Format | PG-TO252-3 (DPAK) | — |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 3 (Gate, Drain, Source) + Tab | — |
| Lead Plating | Pb-free (Matte Tin) | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC1 for target application | — |
| Technology | OptiMOS 2 Power-Transistor | OptiMOS 5 (N-channel trench MOSFET) |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Plage de température de fonctionnement | — | [DATA_NEEDED: Tj min/max] |
| Boîtier | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Statut RoHS | — | Compliant |
| Shipping Packaging | — | Tape & Reel (T/R) |