IPG16N10S4L61AATMA1 vs IPC100N04S5L1R5ATMA1 Comparación
Comparación detallada lado a lado de IPG16N10S4L61AATMA1 por Infineon y IPC100N04S5L1R5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
IPG16N10S4L61AATMA1 ✓ ActivoInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPG16N10S4L61AATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,12 | $1,18 |
| FET Type | Dual N-Channel (Array) | — |
| Technology | Logic-Level, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at 25C | 16 A | — |
| Power Dissipation (PD) | 29 W | — |
| Encapsulado / Carcasa | PG-TDSON-8-10 (Wettable Flank) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +175C (TJ) | — |
| Nivel de sensibilidad a la humedad (MSL) | MSL1 (unlimited floor life at <30C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | 100% |
| AOI Compatible | Yes (Wettable Flank) | — |
| FET Feature | Logic Level Gate | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Encapsulado | — | PG-TDSON-8-34 (SS08 leadless) |
| Nivel MSL | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Estado RoHS | — | Compliant (Green Product) |