IPG16N10S4L61AATMA1 vs IPC100N04S5L1R5ATMA1 비교
다음의 상세 나란히 비교: IPG16N10S4L61AATMA1 제조: Infineon 및 IPC100N04S5L1R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPG16N10S4L61AATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.12 | $1.18 |
| FET Type | Dual N-Channel (Array) | — |
| Technology | Logic-Level, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at 25C | 16 A | — |
| Power Dissipation (PD) | 29 W | — |
| 패키지 / 케이스 | PG-TDSON-8-10 (Wettable Flank) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55C to +175C (TJ) | — |
| 습도 민감도 레벨 (MSL) | MSL1 (unlimited floor life at <30C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | 100% |
| AOI Compatible | Yes (Wettable Flank) | — |
| FET Feature | Logic Level Gate | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| 동작 온도 범위 | — | -55C to +175C |
| 패키지 | — | PG-TDSON-8-34 (SS08 leadless) |
| MSL 레벨 | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| RoHS 상태 | — | Compliant (Green Product) |