IPL60R065C7AUMA1 vs IPL60R105P7AUMA1 Comparación
Comparación detallada lado a lado de IPL60R065C7AUMA1 por Infineon y IPL60R105P7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPL60R065C7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,95 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS P7 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Process Technology | CoolMOS C7 (Superjunction) | — |
| Maximum Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 29 A | — |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΩ | — |
| Maximum Power Dissipation (P_D, T_C=25°C) | 180 W | — |
| Gate-Source Voltage (V_GS, max) | ±20 V | — |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V | — |
| Encapsulado / Carcasa | PG-VSON-4-1 (Source-Down) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (T_J) | -55C to +150C |
| Estado RoHS | Compliant with Exemption | Compliant |
| Automotive Qualified (AEC-Q101) | No | — |
| Total Gate Charge (Q_G, typ.) | [DATA_NEEDED: Q_G typ. value] | — |
| Output Capacitance Stored Energy (E_OSS) | [DATA_NEEDED: E_OSS typ. value] | — |
| Technology | — | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Encapsulado | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Channel Type | — | N-Channel |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Sin halógenos | — | Yes |
| Lead-Free | — | Yes |