IPL60R065C7AUMA1 vs IPL60R105P7AUMA1 비교
다음의 상세 나란히 비교: IPL60R065C7AUMA1 제조: Infineon 및 IPL60R105P7AUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPL60R065C7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.95 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS P7 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Process Technology | CoolMOS C7 (Superjunction) | — |
| Maximum Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 29 A | — |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΩ | — |
| Maximum Power Dissipation (P_D, T_C=25°C) | 180 W | — |
| Gate-Source Voltage (V_GS, max) | ±20 V | — |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V | — |
| 패키지 / 케이스 | PG-VSON-4-1 (Source-Down) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 °C to +150 °C (T_J) | -55C to +150C |
| RoHS 상태 | Compliant with Exemption | Compliant |
| Automotive Qualified (AEC-Q101) | No | — |
| Total Gate Charge (Q_G, typ.) | [DATA_NEEDED: Q_G typ. value] | — |
| Output Capacitance Stored Energy (E_OSS) | [DATA_NEEDED: E_OSS typ. value] | — |
| Technology | — | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| 패키지 | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Channel Type | — | N-Channel |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| 할로겐 프리 | — | Yes |
| Lead-Free | — | Yes |