IPL60R180P6AUMA1 vs IPB60R280P7ATMA1 Comparación
Comparación detallada lado a lado de IPL60R180P6AUMA1 por Infineon y IPB60R280P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPL60R180P6AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $0,88 |
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) | — |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ | — |
| Power Dissipation (Ptot) at Tc=25°C | 176 W | — |
| Rango de temperatura de unión de funcionamiento | -55 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC value] | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) | — |
| Encapsulado | PG-VSON-4 (Thin-PAK) surface mount | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 (600 V) |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Recuento de pines | — | 3 (2 + Tab) |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Generation | — | 7th Gen CoolMOS (successor to P6) |