IPL60R180P6AUMA1 vs IPB60R280P7ATMA1 Comparison

Detailed side-by-side comparison of IPL60R180P6AUMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL60R180P6AUMA1

IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon

IPL60R180P6AUMA1 ✓ Active

Specification Comparison

Parameter IPL60R180P6AUMA1 IPB60R280P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.92 $0.88
Technology CoolMOS P6 (Superjunction N-channel MOSFET) Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C 22.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ
Power Dissipation (Ptot) at Tc=25°C 176 W
Operating Junction Temperature Range -55 °C to +150 °C
Storage Temperature Range -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V)
Package PG-VSON-4 (Thin-PAK) surface mount PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer Infineon Technologies
Product Family CoolMOS P7 (600 V)
Transistor Type N-Channel MOSFET
Drain-Source Voltage (V_DSS) 600 V
Continuous Drain Current (I_D, T_C=25°C) 12 A
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm
Gate-Source Threshold V_GS(th) typ 3.5 V
Power Dissipation P_D (T_C=25°C) 53 W
Pin Count 3 (2 + Tab)
Operating Temperature Range -55 °C to +150 °C (T_j max)
Configuration Single N-Channel
Generation 7th Gen CoolMOS (successor to P6)

Datasheets & Resources

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