IPP075N15N3GXKSA1 vs IPP045N10N3GXKSA1 Comparación
Comparación detallada lado a lado de IPP075N15N3GXKSA1 por Infineon y IPP045N10N3GXKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPP075N15N3GXKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $2,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| Encapsulado | PG-TO220-3 (TO-220 through-hole) | TO-220-3 (PG-TO220-3) through-hole |
| Tipo de montaje | Through Hole | Through Hole |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction operating temperature range] | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Part Number | — | IPP045N10N3GXKSA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Estado RoHS | — | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| Nivel MSL | — | N/A (through-hole package) |