IPP075N15N3GXKSA1 vs IPP045N10N3GXKSA1 比較

詳細な並列比較: IPP075N15N3GXKSA1 メーカー: Infineon および IPP045N10N3GXKSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 ✓ 生産中

仕様比較

パラメータ IPP075N15N3GXKSA1 IPP045N10N3GXKSA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $1.92 $2.20
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 3
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
パッケージ PG-TO220-3 (TO-220 through-hole) TO-220-3 (PG-TO220-3) through-hole
実装タイプ Through Hole Through Hole
動作温度範囲 [DATA_NEEDED: junction operating temperature range] -55 °C to +175 °C (junction, typical MOSFET limit)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Part Number — IPP045N10N3GXKSA1
トランジスタタイプ — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C — 100 A
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C — [DATA_NEEDED: I_D at TC=100C]
Pulsed Drain Current (I<sub>D,pulse</sub>) — 137 A
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V — 4.5 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 3.5 V (typical, per LCSC listing)
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C — 214 W
RoHS ステータス — Compliant (per LCSC datasheet excerpt)
Lead-Free — Yes (Infineon G/GX part suffix)
MSLレベル — N/A (through-hole package)

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