IPP120N08S4-03 vs IPP120N08S403AKSA1 Comparación
Comparación detallada lado a lado de IPP120N08S4-03 por Infineon y IPP120N08S403AKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPP120N08S4-03 | IPP120N08S403AKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $2,15 |
| Part Number | IPP120N08S4-03 | — |
| Manufacturer | Infineon Technologies | — |
| Family | OptiMOS-T2 Power-Transistor | — |
| Channel Type | N-channel Enhancement Mode | N-Channel enhancement mode |
| Drain-Source Voltage VDS max | 80 V | — |
| Continuous Drain Current ID | 120 A (bondwire limited) | — |
| Silicon-Limited Current | 245 A at TC = 25 °C | — |
| On-State Resistance RDS(on) max | 2.5 mΩ at VGS = 10 V | — |
| Gate-Source Voltage VGS | ±20 V (max) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Thermal Resistance RthJC | 0.54 K/W | — |
| Avalanche Rated | 100 % Avalanche tested | — |
| Temperatura de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | TO-220-3 (IPAK) through-hole | TO-220-3-1 (PG-TO220-3-1) |
| Tipo de montaje | Through-Hole | Through Hole |
| Nivel MSL | MSL1 (peak reflow 260 °C) | MSL1 (peak reflow up to 260 C) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Green Product, RoHS compliant | — |
| Orderable Part Number | IPP120N08S403AKSA1 | — |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max |
| Total Gate Charge (Qg) | — | 167 nC |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Avalanche Rating | — | 100% avalanche-tested |
| Estado RoHS | — | Compliant (Green Product) |
| Technology Family | — | OptiMOS |