IPP120N08S4-03 vs IPP120N08S403AKSA1 비교

다음의 상세 나란히 비교: IPP120N08S4-03 제조: Infineon 및 IPP120N08S403AKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ 활성

사양 비교

파라미터 IPP120N08S4-03 IPP120N08S403AKSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.95 $2.15
Part Number IPP120N08S4-03 —
Manufacturer Infineon Technologies —
Family OptiMOS-T2 Power-Transistor —
Channel Type N-channel Enhancement Mode N-Channel enhancement mode
Drain-Source Voltage VDS max 80 V —
Continuous Drain Current ID 120 A (bondwire limited) —
Silicon-Limited Current 245 A at TC = 25 °C —
On-State Resistance RDS(on) max 2.5 mΩ at VGS = 10 V —
Gate-Source Voltage VGS ±20 V (max) —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Thermal Resistance RthJC 0.54 K/W —
Avalanche Rated 100 % Avalanche tested —
동작 온도 -55 °C to +175 °C —
패키지 TO-220-3 (IPAK) through-hole TO-220-3-1 (PG-TO220-3-1)
실장 유형 Through-Hole Through Hole
MSL 레벨 MSL1 (peak reflow 260 °C) MSL1 (peak reflow up to 260 C)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Green Product, RoHS compliant —
Orderable Part Number IPP120N08S403AKSA1 —
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 120 A
Pulsed Drain Current (bondwire-limited) — 245 A at 25 C
Maximum Power Dissipation (Ptot) — 278 W (Tc)
On-State Resistance (RDS(on)) — 2.8 mOhm typical at VGS=10 V, ID=100 A
Gate Threshold Voltage (VGS(th)) — 4 V max
Total Gate Charge (Qg) — 167 nC
Input Capacitance (Ciss) — 11550 pF
Thermal Resistance, Junction-to-Case (RthJC) — 0.54 K/W
동작 접합 온도 — -55 C to +175 C
Avalanche Rating — 100% avalanche-tested
RoHS 상태 — Compliant (Green Product)
Technology Family — OptiMOS

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