IPP120N08S4-03 vs IPP120N08S403AKSA1 Comparaison
Comparaison détaillée côte à côte de IPP120N08S4-03 par Infineon et IPP120N08S403AKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPP120N08S4-03 | IPP120N08S403AKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,95 | $2,15 |
| Part Number | IPP120N08S4-03 | — |
| Manufacturer | Infineon Technologies | — |
| Family | OptiMOS-T2 Power-Transistor | — |
| Channel Type | N-channel Enhancement Mode | N-Channel enhancement mode |
| Drain-Source Voltage VDS max | 80 V | — |
| Continuous Drain Current ID | 120 A (bondwire limited) | — |
| Silicon-Limited Current | 245 A at TC = 25 °C | — |
| On-State Resistance RDS(on) max | 2.5 mΩ at VGS = 10 V | — |
| Gate-Source Voltage VGS | ±20 V (max) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Thermal Resistance RthJC | 0.54 K/W | — |
| Avalanche Rated | 100 % Avalanche tested | — |
| Température de fonctionnement | -55 °C to +175 °C | — |
| Boîtier | TO-220-3 (IPAK) through-hole | TO-220-3-1 (PG-TO220-3-1) |
| Type de montage | Through-Hole | Through Hole |
| Niveau MSL | MSL1 (peak reflow 260 °C) | MSL1 (peak reflow up to 260 C) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Green Product, RoHS compliant | — |
| Orderable Part Number | IPP120N08S403AKSA1 | — |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max |
| Total Gate Charge (Qg) | — | 167 nC |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| Température de jonction en fonctionnement | — | -55 C to +175 C |
| Avalanche Rating | — | 100% avalanche-tested |
| Statut RoHS | — | Compliant (Green Product) |
| Technology Family | — | OptiMOS |