IPP320N20N3GXKSA1 vs IPP147N12N3GXKSA1 Comparación
Comparación detallada lado a lado de IPP320N20N3GXKSA1 por Infineon y IPP147N12N3GXKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ ActivoInfineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPP320N20N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,36 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 34 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Power Dissipation PD at TC=25°C | 136 W | — |
| Encapsulado | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Número de pines | 3 (3 + Tab) | 3 (3+Tab) |
| Rango de temperatura de funcionamiento | -55°C to +175°C | [DATA_NEEDED: Tj max and operating range] |
| Channel Type | N-Channel | — |
| Element Configuration | Single | — |
| Estado RoHS | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| Nivel MSL | Not applicable (through-hole) | — |
| Series | — | OptiMOS |
| Tipo de transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) at Tc=25C | — | 56 A |
| Continuous Drain Current (Id) at Ta | — | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | — | 107 W |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | — | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | — | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | — | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Qualification | — | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | — | Tube |