IPP320N20N3GXKSA1 vs IPP147N12N3GXKSA1 비교

다음의 상세 나란히 비교: IPP320N20N3GXKSA1 제조: Infineon 및 IPP147N12N3GXKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPP320N20N3GXKSA1 IPP147N12N3GXKSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.36 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Power Dissipation PD at TC=25°C 136 W —
패키지 TO-220-3 (PG-TO220-3) through-hole PG-TO220-3 (through-hole)
실장 유형 Through Hole Through Hole
핀 수 3 (3 + Tab) 3 (3+Tab)
동작 온도 범위 -55°C to +175°C [DATA_NEEDED: Tj max and operating range]
Channel Type N-Channel —
Element Configuration Single —
RoHS 상태 Compliant Compliant (per distributor listing suffixes XKSA1)
Lead-Free Yes Yes
MSL 레벨 Not applicable (through-hole) —
Series — OptiMOS
트랜지스터 유형 — N-Channel MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) at Tc=25C — 56 A
Continuous Drain Current (Id) at Ta — 56 A (Ta, per DigiKey listing)
Power Dissipation (Pd) at Tc=25C — 107 W
Gate Charge (Qg) — [DATA_NEEDED: typical Qg value]
Rds(on) max — [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V]
Vgs(th) (Gate Threshold) — [DATA_NEEDED: typical gate threshold voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: typical Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: typical Coss]
Reverse Recovery (trr) — [DATA_NEEDED: body-diode reverse recovery time]
Avalanche Energy Rating — Single-pulse avalanche rated
Qualification — Automotive grade (per datasheet.live listing 'Automotive')
Packing Method — Tube

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