IPP320N20N3GXKSA1 vs IPP147N12N3GXKSA1 对比

详细并排对比 IPP320N20N3GXKSA1 出自 Infineon 和 IPP147N12N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 ✓ 量产中

规格对比

参数 IPP320N20N3GXKSA1 IPP147N12N3GXKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.36 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Power Dissipation PD at TC=25°C 136 W —
封装 TO-220-3 (PG-TO220-3) through-hole PG-TO220-3 (through-hole)
安装类型 Through Hole Through Hole
引脚数 3 (3 + Tab) 3 (3+Tab)
工作温度范围 -55°C to +175°C [DATA_NEEDED: Tj max and operating range]
Channel Type N-Channel —
Element Configuration Single —
RoHS 状态 Compliant Compliant (per distributor listing suffixes XKSA1)
Lead-Free Yes Yes
MSL 等级 Not applicable (through-hole) —
Series — OptiMOS
晶体管类型 — N-Channel MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (Vdss) — 120 V
Continuous Drain Current (Id) at Tc=25C — 56 A
Continuous Drain Current (Id) at Ta — 56 A (Ta, per DigiKey listing)
Power Dissipation (Pd) at Tc=25C — 107 W
Gate Charge (Qg) — [DATA_NEEDED: typical Qg value]
Rds(on) max — [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V]
Vgs(th) (Gate Threshold) — [DATA_NEEDED: typical gate threshold voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: typical Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: typical Coss]
Reverse Recovery (trr) — [DATA_NEEDED: body-diode reverse recovery time]
Avalanche Energy Rating — Single-pulse avalanche rated
Qualification — Automotive grade (per datasheet.live listing 'Automotive')
Packing Method — Tube

数据手册与资源

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