IPP60R190P6XKSA1 vs IPP60R180P7XKSA1 Comparación
Comparación detallada lado a lado de IPP60R190P6XKSA1 por Infineon y IPP60R180P7XKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPP60R190P6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,02 | $1,30 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS P7 (Superjunction N-Channel) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Encapsulado | PG-TO220-3 (through-hole) | PG-TO220-3 (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55 °C to +150 °C |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | Not applicable (through-hole) | N/A (through-hole) |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Número de pines | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |