IPP60R190P6XKSA1 vs STP20N60M2 Comparación
Comparación detallada lado a lado de IPP60R190P6XKSA1 por Infineon y STP20N60M2 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 ✓ ActivoComparación de especificaciones
| Parámetro | IPP60R190P6XKSA1 | STP20N60M2 |
|---|---|---|
| Marca | Infineon | STMicroelectronics |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,02 | $1,50 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Encapsulado | PG-TO220-3 (through-hole) | TO-220 |
| Tipo de montaje | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55°C to +150°C |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at 25°C | — | 20 A |
| Continuous Drain Current (ID) at 100°C | — | 12 A |
| Pulsed Drain Current (IDM) | — | 80 A |
| On-Resistance (RDS(on)) | — | 0.19 ohm typical, 0.23 ohm max |
| Gate-Source Voltage (VGS) | — | ±25 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V to 4 V |
| Total Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 120 pF |
| Reverse Transfer Capacitance (Crss) | — | 5 pF |
| Avalanche Energy (EAS) | — | 400 mJ |
| Thermal Resistance (Junction-to-Case) | — | 1.67 °C/W |
| Resistencia térmica, unión a ambiente | — | 62.5 °C/W |