IPP60R190P6XKSA1 vs STP20N60M2 Comparison
Detailed side-by-side comparison of IPP60R190P6XKSA1 by Infineon and STP20N60M2 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 ObsoleteSpecification Comparison
| Parameter | IPP60R190P6XKSA1 | STP20N60M2 |
|---|---|---|
| Brand | Infineon | STMicroelectronics |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Obsolete |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Package | PG-TO220-3 (through-hole) | TO-220 |
| Mounting Type | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Operating Temperature Range | -55C to +150C (junction) | -55°C to +150°C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | Not applicable (through-hole) | — |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at 25°C | — | 20 A |
| Continuous Drain Current (ID) at 100°C | — | 12 A |
| Pulsed Drain Current (IDM) | — | 80 A |
| On-Resistance (RDS(on)) | — | 0.19 ohm typical, 0.23 ohm max |
| Gate-Source Voltage (VGS) | — | ±25 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V to 4 V |
| Total Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 120 pF |
| Reverse Transfer Capacitance (Crss) | — | 5 pF |
| Avalanche Energy (EAS) | — | 400 mJ |
| Thermal Resistance (Junction-to-Case) | — | 1.67 °C/W |
| Thermal Resistance, Junction-to-Ambient | — | 62.5 °C/W |