IPT004N03LATMA1 vs BSC050N04LSGATMA1 Comparación
Comparación detallada lado a lado de IPT004N03LATMA1 por Infineon y BSC050N04LSGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPT004N03LATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,89 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on), max | [DATA_NEEDED: RDS(on) max in mΩ] | — |
| On-Resistance RDS(on), typical | 0.4 mΩ (typ) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total nC] | — |
| Power Dissipation (Ta, 1in² PCB) | 3.8 W | — |
| Disipación de potencia (TC=25°C) | 300 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (Tj) | -55C to +150C |
| Encapsulado | PG-HSOF-8-1 (TO-Leadless, source-down) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 |
| FET Type | — | N-Channel |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | — | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |