IPT004N03LATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPT004N03LATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT004N03LATMA1
IPT004N03LATMA1 - 30V 300A 0.4mΞ© OptiMOS N-MOSFET | Infineon
IPT004N03LATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPT004N03LATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.89 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 300 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on), max | [DATA_NEEDED: RDS(on) max in mΞ©] | β |
| On-Resistance RDS(on), typical | 0.4 mΞ© (typ) | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total nC] | β |
| Power Dissipation (Ta, 1inΒ² PCB) | 3.8 W | β |
| Power Dissipation (Tc=25Β°C) | 300 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (Tj) | -55C to +150C |
| Package | PG-HSOF-8-1 (TO-Leadless, source-down) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| FET Type | β | N-Channel |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | β | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |