IPT007N06NATMA1 vs BSZ060NE2LSATMA1 Comparación
Comparación detallada lado a lado de IPT007N06NATMA1 por Infineon y BSZ060NE2LSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPT007N06NATMA1 | BSZ060NE2LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,84 | $0,27 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 44 A |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (TJ) | -55C to +150C |
| Encapsulado | PG-HSOF-8-1 (TOLL) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | 1 |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ060NE2LSATMA1 |
| Continuous Drain Current (ID) @ Ta=25C | — | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 6 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 26 W |
| Shipping Packaging | — | Tape & Reel |