IPT007N06NATMA1 vs BSZ060NE2LSATMA1 비교
다음의 상세 나란히 비교: IPT007N06NATMA1 제조: Infineon 및 BSZ060NE2LSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPT007N06NATMA1 | BSZ060NE2LSATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.84 | $0.27 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 44 A |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| 동작 온도 범위 | -55 C to +175 C (TJ) | -55C to +150C |
| 패키지 | PG-HSOF-8-1 (TOLL) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| MSL 레벨 | MSL 1 (per JEDEC J-STD-020) | 1 |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 할로겐 프리 | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ060NE2LSATMA1 |
| Continuous Drain Current (ID) @ Ta=25C | — | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 6 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 26 W |
| Shipping Packaging | — | Tape & Reel |