IQDH88N06LM5CGSCATMA1 vs IPC100N04S51R7ATMA1 Comparación
Comparación detallada lado a lado de IQDH88N06LM5CGSCATMA1 por Infineon y IPC100N04S51R7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IQDH88N06LM5CGSCATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,31 | $0,82 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Corriente de drenador continua (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Disipación de potencia (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ) | — |
| Encapsulado | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TDSON-8-34 (SS08 leadless) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | MSL1 (260 °C peak reflow) |
| Estado RoHS | Compliant | Compliant (Green Product) |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |