IQDH88N06LM5CGSCATMA1 vs IPC100N04S51R7ATMA1 Comparaison
Comparaison détaillée côte à côte de IQDH88N06LM5CGSCATMA1 par Infineon et IPC100N04S51R7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IQDH88N06LM5CGSCATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,31 | $0,82 |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Courant de drain continu (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Dissipation de puissance (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) | — |
| Boîtier | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TDSON-8-34 (SS08 leadless) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | MSL1 (260 °C peak reflow) |
| Statut RoHS | Compliant | Compliant (Green Product) |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Température de jonction en fonctionnement | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |