IQDH88N06LM5CGSCATMA1 vs IPC100N04S51R7ATMA1 比較
詳細な並列比較: IQDH88N06LM5CGSCATMA1 メーカー: Infineon および IPC100N04S51R7ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQDH88N06LM5CGSCATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.31 | $0.82 |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| 連続ドレイン電流（TC=25°C） | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| 消費電力（TC=25°C） | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| 動作温度範囲 | -55°C to +175°C (TJ) | — |
| パッケージ | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TDSON-8-34 (SS08 leadless) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | MSL1 (260 °C peak reflow) |
| RoHS ステータス | Compliant | Compliant (Green Product) |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| 動作接合温度 | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |