IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
N.º de pieza: IQDH88N06LM5SCATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.07 | $4,07 |
| 10 | $3.82 | $38,20 |
| 100 | $3.41 | $341,00 |
| 500 | $2.94 | $1.470,00 |
| 1.000 | $2.55 | $2.550,00 |
IQDH88N06LM5SCATMA1 Descripción general
A power MOSFET is a voltage-controlled switch in which the gate field modulates a conducting channel between source and drain. N-channel enhancement-mode MOSFETs like this part are the dominant switching element in synchronous buck converters, half-bridges, and full-bridges because they offer lower RDS(on) per silicon area than P-channel counterparts. Within the broader taxonomy, this OptiMOS 5 device is a discrete power semiconductor -> MOSFET -> N-channel MOSFET -> low-voltage power MOSFET, optimized for high-frequency, high-current switching.
Key differentiating features include an integrated Schottky-like monolithically integrated body diode optimized for low Qrr and robust commutation, a 1.7 V gate-threshold voltage supporting standard logic-level and 5 V/12 V driver compatibility, and a total gate charge of 76 nC that allows MHz-class switching frequencies in hard-switched topologies. The source-down PG-WHSON-8 package exposes the die paddle on both sides of the PCB for direct top-side and bottom-side heatsinking, doubling the heat-flow path versus standard DFN packages.
OptiMOS 5 technology delivers a figure-of-merit (FOM = RDS(on) x Qg) that is among the lowest commercially available for 60 V parts. This translates directly into lower conduction loss, lower switching loss, and simpler thermal design - particularly valuable in high-density DC-DC converters where every milliwatt of loss becomes a thermal-design penalty.
Typical applications include 48 V automotive eMobility auxiliary converters, high-current telecom buck regulators, server ORing and hot-swap controllers, industrial eFuse circuits, and battery management protection in 12 V/24 V/48 V Li-ion packs. The dual-side-cooling package is also preferred for vertical PCB mounting where airflow is forced across both faces.
When designing with this part, pay close attention to gate-drive voltage headroom (recommended VGS = 10 V for full RDS(on) spec) and source-down PCB layout symmetry - asymmetric copper areas on the top vs. bottom side will cause unbalanced current sharing and degrade thermal performance. The exposed source pad must be continuous with the system power-ground plane for the lowest parasitic source inductance.
This page consolidates distributor pricing, drop-in alternatives, and practical PCB layout notes not found in the manufacturer datasheet alone, giving engineers a one-stop view of the IQDH88N06LM5SCATMA1 for sourcing and design-in decisions.
Alternativas directas para IQDH88N06LM5SCATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IQDH88N06LM5SCATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Cooling.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IQDH88N06LM5CGSCATMA1
✅ Sustitución directa✓ En stock
$2.31 / unidad
Ver hoja de datos →IQDH29NE2LM5CGSCATMA1
✅ Sustitución directa✓ En stock
$1.84 / unidad
Ver hoja de datos →IQDH88N06LM5CGSCATMA1
✅ Sustitución directa✓ En stock
$2.31 / unidad
Ver hoja de datos →ISC011N04NM7VATMA1
✅ Sustitución directa✓ En stock
$0.41 / unidad
Ver hoja de datos →IQDH88N06LM5SCATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Number | IQDH88N06LM5SCATMA1 |
| Series | OptiMOS 5 |
| Technology | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Ta) | 42 A |
| Continuous Drain Current (ID, Tc) | 447 A |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | 1.7 V |
| Total Gate Charge (Qg) | 76 nC |
| Input Capacitance (Ciss) | 11 nF |
| Output Capacitance (Coss) | 2 nF |
| Reverse Transfer Capacitance (Crss) | 95 pF |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| Rango de temperatura de funcionamiento | -55 C to +175 C |
| Encapsulado | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
Configuración de pines de IQDH88N06LM5SCATMA1
| Pin 1 | Source — Source pad (internally connected to central die paddle) |
| Pin 2 | Source — Source pad |
| Pin 3 | Gate — Gate connection |
| Pin 4 | Source — Source pad |
| Pin 5 | Source — Source pad |
| Pin 6 | Drain — Drain tab |
| Pin 7 | Gate — Gate connection (alternate pad) |
| Pin 8 | Source — Source pad |
Área de funcionamiento seguro (DC) - IQDH88N06LM5SCATMA1
Aplicaciones típicas
IQDH88N06LM5SCATMA1 es adecuado para 7 aplicacións: 48 V Automotive eMobility Auxiliary Converters, High-Current Telecom Buck Regulators, Server ORing and Hot-Swap Controllers, Industrial eFuse and Circuit Protection, Battery Management System (BMS) Protection, Brushless DC (BLDC) Motor Drive Half-Bridge, Solar Microinverter / MPPT Stage.
48 V Automotive eMobility Auxiliary Converters
The IQDH88N06LM5SCATMA1 fits 48 V mild-hybrid auxiliary DC-DC converters (e.g., 48 V to 12 V buck) thanks to its 60 V VDS rating (>20% margin above 54 V transient) and 0.7 mOhm RDS(on) at 10 V VGS. The dual-side-cooled PG-WHSON-8-U02 source-down package handles the high continuous current typical of eMobility auxiliary rails (often 100-200 A) without saturating the thermal envelope. Designers place the device as the high-side switch in a synchronous buck stage; the low Qrr OptiMOS 5 body diode simplifies dead-time management.
Recomendado
High-Current Telecom Buck Regulators
In 48 V telecom point-of-load (PoL) buck regulators, the IQDH88N06LM5SCATMA1 serves as the high-side control FET where minimizing conduction loss is critical to overall efficiency (often targeted >97% peak). The 0.7 mOhm RDS(on) reduces full-load losses versus typical 2-3 mOhm 60 V parts by 60-75%, while the 76 nC Qg supports switching frequencies of 300-500 kHz without excessive driver loss. The source-down package enables direct bottom-side copper heatsinking in vertically-mounted telecom bricks.
Recomendado
Server ORing and Hot-Swap Controllers
In redundant server power shelves, the IQDH88N06LM5SCATMA1 functions as the ORing FET that isolates a failed supply from the live bus. Its 0.7 mOhm RDS(on) limits steady-state voltage drop to <35 mV at 50 A, minimizing power dissipation in the always-on path. The 60 V VDS easily tolerates 48 V nominal rails with transients, and the dual-side cooling handles the typical 2-5 W continuous dissipation per ORing FET in high-current 1U/2U server designs.
Recomendado
Industrial eFuse and Circuit Protection
The IQDH88N06LM5SCATMA1 works well in 24 V/48 V industrial eFuse circuits that need fast fault isolation (microseconds) combined with low steady-state loss. The Infineon datasheet SOA curve confirms robust performance at 60 V / 100 A single-pulse events typical of hot-plug transients. The PG-WHSON-8-U02 package's exposed source pad provides direct thermal coupling to a copper bus bar, enabling eFuse designs rated 100-200 A continuous without external heatsinks.
Recomendado
Battery Management System (BMS) Protection
In 12 V, 24 V and 48 V Li-ion battery packs, the IQDH88N06LM5SCATMA1 acts as the pack-protection disconnect switch. The 0.7 mOhm RDS(on) minimizes voltage drop across the protection FET, preserving usable pack capacity at high discharge currents (e.g., 200 A peak in e-scooter / light-EV packs). The 60 V VDS rating covers all standard Li-ion configurations up to 16S (58.4 V full charge), and the dual-side-cooling source-down package simplifies thermal layout in cylindrical 18650/21700 pack holders.
Recomendado
Brushless DC (BLDC) Motor Drive Half-Bridge
For low-voltage BLDC motor drives used in robotics, e-bikes, and small industrial actuators, the IQDH88N06LM5SCATMA1 serves as either the high-side or low-side switch in a three-phase half-bridge stage powered from 24 V or 48 V. The 447 A TC pulsed current rating supports peak torque transients without failure, and the low Qrr OptiMOS 5 body diode minimizes dead-time distortion at high PWM frequencies (50-100 kHz). The dual-side-cooled package is advantageous in enclosed motor housings where both sides see airflow.
Recomendado
Solar Microinverter / MPPT Stage
In 60 V-class solar microinverters (e.g., 4S-8S Li-ion battery or sub-60 V PV panel applications), the IQDH88N06LM5SCATMA1 works as the synchronous rectifier on the secondary side of a high-frequency transformer-isolated DC-DC stage. The 0.7 mOhm RDS(on) at 10 V VGS improves weighted efficiency (CEC-weighted) by 0.3-0.5% versus 2-3 mOhm alternatives, which translates to measurably higher annual energy yield in field deployments.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IQDH88N06LM5SCATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IQDH88N06LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHSON-8-U02 (source-down) | PG-WHSON-8-U02 (source-down) - same | PG-WHSON-8-U02 (source-down) - same | PG-WHSON-8-U02 (source-down) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 25 V | 40 V |
| RDS(on) at 10 V VGS | 0.7 mOhm | 0.86 mOhm | 0.29 mOhm (lower, but VDS-limited) | 1.1 mOhm |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Sub-milliohm RDS(on) in a source-down dual-side-cooling package (frente a Standard 60 V DFN MOSFETs (e.g., competitor 60 V 1.5 mOhm DFN-8))
- Tightest parametric match in same source-down footprint (frente a IQDH88N06LM5CGSCATMA1)
- OptiMOS 5 monolithically optimized body diode (frente a Standard 60 V MOSFETs without optimized body diode)
Notas de diseño
Estimated: at VDS=48 V, ID=100 A, and RDS(on)=0.7 mOhm, the conduction loss is approximately 7 W. The PG-WHSON-8-U02 source-down package has a dual-side-cooling advantage - design symmetric top and bottom copper pours (at least 6 cm^2 per side on a 40 x 40 x 1.5 mm FR4 board per the Infineon datasheet test condition) to extract the rated 333 W at TC. Asymmetric copper layout causes unbalanced current sharing and reduces effective SOA.
Place the gate-drive resistor (typically 4.7-10 ohm) within 5 mm of the gate pad to limit parasitic loop inductance and prevent VGS ringing. The source-down footprint requires direct vias through the thermal pad to the opposite-side copper plane - use a 4x4 array of 0.3 mm thermal vias filled with copper for best thermal transfer. Avoid signal traces under the source pad to maintain creepage clearance.
Keep the high-current source-return loop as short and wide as possible. Place input/output capacitors within 3 mm of the drain and source pads to minimize parasitic inductance that can cause VDS overshoot during switching transitions. The 60 V VDS rating has limited transient margin - add a TVS clamp (e.g., 56 V SMBJ-type) across the drain-source of each switch for inductive-load safety.
Do not drive the gate above +20 V (the absolute maximum VGS rating). Recommended gate drive is 10 V for full RDS(on) spec, with a tightly-regulated 12 V supply via a dedicated LDO to avoid exceeding the rating during transients. Below 4.5 V VGS the RDS(on) rises sharply and the part will overheat; verify the gate driver UVLO threshold is set appropriately for your supply rail.
Información de cumplimiento
RoHS compliant per Infineon product page and JLCPCB listing. Not AEC-Q100 qualified in this specific suffix - automotive-grade equivalents available on request from Infineon factory.
