IQE020N04LM6CGATMA1 vs ISK057N04LM6ATLA1 Comparación
Comparación detallada lado a lado de IQE020N04LM6CGATMA1 por Infineon y ISK057N04LM6ATLA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IQE020N04LM6CGATMA1 | ISK057N04LM6ATLA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,75 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Encapsulado | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +150°C | -55 °C to +150 °C |
| Technology | OptiMOS 6, TrenchFET-class | Trench (OptiMOS 6) |
| Configuration | Single N-Channel, source-down | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc | — | 64 A |
| Continuous Drain Current (ID) at Ta | — | [DATA_NEEDED: ID at TA=25C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| RDS(on) typical at VGS=10V | — | 5.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg total) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 39.1 W |
| Encapsulado / Carcasa | — | PG-VSON-6-1 (PQFN 2x2) |
| Packaging | — | Tape & Reel (TR) |
| DigiKey Part Number | — | 448-ISK057N04LM6ATLA1TR-ND |