IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon
N.º de pieza: IQE020N04LM6CGATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.92 | $2,92 |
| 10 | $2.63 | $26,30 |
| 100 | $2.34 | $234,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.75 | $1.750,00 |
IQE020N04LM6CGATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion and motor-drive circuits. As a member of the OptiMOS 6 family, the IQE020N04LM6CG belongs to a hierarchy of N-channel enhancement-mode MOSFETs that sit within Infineon's broader low-voltage power MOSFET portfolio, optimized for 25–40 V synchronous rectification, hot-swap, and battery-protection applications. Compared with older OptiMOS 5 generations, OptiMOS 6 reduces figure-of-merit (FOM = RDS(on) × Qg) and improves switching performance at high di/dt.
The package is the key differentiating feature. The source-down, center-gate PQFN 3.3 × 3.3 layout places the thermal pad and source connection on the bottom of the package - the same side that mounts to the PCB. This construction provides a direct thermal path from the die to the board, lowering RthJA substantially versus conventional drain-down QFN packages. It also enables top-side cooling, dual-side cooling, and a simplified PCB layout where the source is the natural ground-return.
Typical applications include 24 V brushless DC (BLDC) motor drives, e-fuse and hot-swap controllers, battery-management systems (BMS) for 1S–10S lithium packs, point-of-load (POL) synchronous buck converters, USB-PD power paths, and 48 V mild-hybrid DC-DC converters. With RDS(on) of ~2.0 mΩ at 10 V VGS, conduction loss at 20 A is roughly 0.8 W, making it suitable for high-current density designs.
Design considerations include VGS(th) gate-drive requirements (10 V drive recommended for full RDS(on) rating), PCB layout to minimize source-inductance in the gate loop, and thermal management via copper area and via arrays. The exposed source-down pad should be soldered to a flooded copper pour for optimum heat spreading.
This page consolidates distributor pricing, drop-in alternative listings, and practical layout guidance that goes beyond the manufacturer's datasheet to accelerate your design and sourcing decisions.
Alternativas directas para IQE020N04LM6CGATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IQE020N04LM6CGATMA1 (mismo factor de forma y huella) — difiere en Technology, Operating Temperature Range, Package, Drain-Source Voltage (VDS), MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IQE036N08NM6CGSCATMA1
✅ Sustitución directa✓ En stock
$0.88 / unidad
Ver hoja de datos →IQE004NE1LM7CGATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$1.06 / unidad
Ver hoja de datos →ISC016N08NM8ATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$1.02 / unidad
Ver hoja de datos →IPT067N20NM6ATMA1
✅ Sustitución directa✓ En stock
$4.85 / unidad
Ver hoja de datos →IQE020N04LM6CGATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A |
| Continuous Drain Current (ID) at TC=25°C | 166 A |
| Power Dissipation (PD) at TA=25°C | 2.5 W |
| Power Dissipation (PD) at TC=25°C | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ |
| Encapsulado | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +150°C |
| Technology | OptiMOS 6, TrenchFET-class |
| Configuration | Single N-Channel, source-down |
| Estado RoHS | Compliant |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) |
Configuración de pines de IQE020N04LM6CGATMA1
| Pin 1 | S (Source / Sense) — Source connection (Kelvin sense pin for gate return) |
| Pin 2 | G (Gate) — Gate drive input (center pin, accessible from top side) |
| Pin 3 | S (Source) — Source pin |
| Pin 4 | S (Source) — Source pin |
| Pin 5 | S (Source) — Source pin |
| Pin 6 | S (Source) — Source pin |
| Pin 7 | S (Source) — Source pin |
| Pin 8 | S (Source) — Source pin |
| Pin 9 | S (Source) — Source pin |
| Pin PAD | Source / Thermal Pad — Exposed bottom pad - source potential, primary thermal path |
Área de funcionamiento seguro (DC, TA=25°C)
Aplicaciones típicas
IQE020N04LM6CGATMA1 es adecuado para 6 aplicacións: 24V BLDC Motor Drive, Battery Management System (BMS) Protection, USB-PD Power Path / Load Switch, Synchronous Buck Converter (POL), 48V Mild-Hybrid DC-DC Stage, Hot-Swap / E-Fuse Controller.
24V BLDC Motor Drive
The IQE020N04LM6CGATMA1 is well-suited as the low-side or high-side switch in 24 V brushless DC motor half-bridges. Its 40 V VDS rating provides margin above 28 V automotive transients, while the 2.0 mΩ RDS(on) keeps conduction losses under 1 W at 20 A continuous drain current. The source-down PG-TTFN-9-3 package allows tight half-bridge layout with minimal source-inductance loop, which is critical for clean switching at 25–50 kHz PWM frequencies used in e-bike and power-tool drives. Pair with a gate driver such as the 6EDL04N02PRXUMA1 (Site MPN) for the high-side bootstrap supply.
Recomendado
Battery Management System (BMS) Protection
In lithium-ion battery packs from 1S to 10S (nominally 12 V to 36 V), the IQE020N04LM6CGATMA1 functions as a low-RDS(on) protection FET on the charge/discharge path. The 40 V VDS rating covers up to 12S packs with margin, and the 2.0 mΩ typical on-resistance minimizes voltage drop during peak discharge - critical for high-C-rate applications such as e-scooters and power tools. The source-down PQFN thermal pad enables direct heat sinking into the battery management PCB ground plane. Use with the TLE42744DV50ATMA1 LDO (Site MPN) for the BMS microcontroller supply rail.
Recomendado
USB-PD Power Path / Load Switch
For USB Power Delivery (USB-PD) and other 5 V to 20 V hot-swap/load-switch applications, the IQE020N04LM6CGATMA1 provides an efficient back-to-back or single-FET blocking switch. Its 40 V rating covers 20 V USB-PD EPR with margin, and the 25 A continuous current handles 100 W EPR power levels with low conduction loss. The source-down package keeps the PCB footprint compact at 3.3 × 3.3 mm while offering thermal performance comparable to larger 5 × 6 mm DFN parts. Combine with the BTS134DATMA1 (Site MPN) as an additional input protection switch.
Recomendado
Synchronous Buck Converter (POL)
As the low-side synchronous rectifier (SR) in 12 V-input point-of-load (POL) buck converters, the IQE020N04LM6CGATMA1 provides efficient current handling with low switching loss thanks to OptiMOS 6 technology. The 40 V VDS easily handles 12 V nominal with margin for transients, and the 166 A TC-rated pulsed current supports high di/dt transitions at 500 kHz+ switching frequencies. The source-down PQFN enables the SR FET to be placed very close to the high-side FET and inductor, minimizing the high-di/dt loop and reducing EMI.
Recomendado
48V Mild-Hybrid DC-DC Stage
In 48 V mild-hybrid automotive power systems, the IQE020N04LM6CGATMA1 can serve as the low-side primary switch in buck or as the SR FET in boost stages after the 12 V battery rail is generated. While the 40 V VDS limits direct use on the 48 V bus, it is ideal for the secondary-side 12 V conversion stage where efficiency at 20 A+ is critical. The 2.0 mΩ RDS(on) keeps total stage efficiency above 97%, and AEC-Q-style reliability from Infineon supports automotive qualification flows when paired with the IRF7815TRPBF (Site MPN).
Recomendado
Hot-Swap / E-Fuse Controller
The IQE020N04LM6CGATMA1 functions as the main pass-FET in 24 V hot-swap and electronic fuse (e-fuse) controllers, providing inrush current limiting and short-circuit protection. Its 40 V rating covers 24 V industrial rails, and the 25 A continuous rating supports most server and telecom board-level power requirements. The source-down package allows the FET to be soldered directly to a large copper pour, spreading the 2.5 W typical dissipation and keeping junction temperature in check during steady-state operation. Use the BTS70081EPAXUMA1 (Site MPN) for a complete integrated high-side solution.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IQE020N04LM6CGATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IQE036N08NM6CGSCATMA1 | IQE004NE1LM7CGATMA1 | ISC016N08NM8ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PQFN 3.3x3.3 source-down (PG-TTFN-9-3) | PQFN 3.3x3.3 source-down (same) | PQFN 3.3x3.3 family (verify pinout) | PQFN 3.3x3.3 family | PQFN 5x6 source-down |
| Drain-Source Voltage (VDS) | 40 V | 80 V | 40 V (verify) | 80 V | 200 V |
| RDS(on) typical @ VGS=10V | 2.0 mΩ | 3.6 mΩ | 0.4 mΩ | 1.6 mΩ | 6.7 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 | OptiMOS 8 | OptiMOS 6 |
| Package Construction | Source-down center-gate | Source-down dual-side cooled | Source-down (verify) | Source-down | Source-down |
Diferenciadores clave
- Lowest RDS(on) in 40V OptiMOS 6 PQFN 3.3x3.3 family (frente a IQE036N08NM6CGSCATMA1)
- Source-down thermal architecture (frente a Standard drain-down QFN MOSFETs)
- Latest OptiMOS 6 silicon generation (frente a OptiMOS 5 BSZ series)
Notas de diseño
Estimated: At VDS×ID = 20 A continuous and RDS(on) = 2.0 mΩ, conduction loss is P = I² × R = 0.8 W. The source-down PG-TTFN-9-3 package transfers this heat directly into the PCB copper pour through the exposed bottom pad. On the Infineon reference 40 × 40 × 1.5 mm FR4 board with 6 cm² copper (drain side), RthJA is approximately 50 °C/W - so a 0.8 W loss raises junction temperature by ~40 °C above 25 °C ambient. For higher currents, expand copper area and add thermal vias beneath the exposed pad.
The source-down architecture places the source on the PCB-facing side. Layout the high-current return (source) as a flooded copper plane on the top layer, stitched with multiple vias to inner ground planes. Keep the gate-drive loop (gate driver output → gate resistor → FET gate → source-sense pin → gate driver ground) area under 0.5 cm² to minimize ringing. Place the gate resistor within 5 mm of the FET gate pin to limit parasitic inductance.
Do not assume VGS(th) of 4.5 V is sufficient - drive the gate to 10 V for full RDS(on) rating. Below 6 V VGS the on-resistance can be 2-3× the specified value, doubling conduction loss. Also avoid using a single large copper pour as the only source connection - use the source-sense pin (pin 1) for the gate-driver return to prevent VGS degradation under high di/dt. Finally, verify maximum junction temperature of 150 °C against your worst-case SOA operating point.
Top-side cooling: the drain is exposed on the top of the package, enabling an attached heatsink for applications requiring >5 W dissipation. For top-side cooling, use a thermal interface material (TIM) with thermal conductivity ≥ 3 W/mK and apply 0.05 mm thick. Maintain 6 mil clearance between the heatsink and any exposed gate pad or source-sense trace to prevent shorts.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - contact Infineon for automotive-grade OptiMOS 6 variants if automotive qualification is required.
