IQE065N10NM5CGSCATMA1 vs IQE050N08NM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE065N10NM5CGSCATMA1 por Infineon y IQE050N08NM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE065N10NM5CGSCATMA1 | IQE050N08NM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $0,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | 16 A |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Encapsulado | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 (trench) |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55C to +175C (junction, typical) |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC | — | 99 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 5.0 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.8 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation at TC (PD) | — | 100 W |
| Total Power Dissipation at TA (PD) | — | 2.5 W |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant |
| Nivel MSL | — | 1 |