IQEH50NE2LM7UCGSCATMA1 vs IQE065N10NM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQEH50NE2LM7UCGSCATMA1 por Infineon y IQE065N10NM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQEH50NE2LM7UCGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,78 | $1,28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at TA | 54 A | 13 A |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Encapsulado | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-1 (Source-Down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | OptiMOS 5 |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 5 trench-gate |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |