IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
N.º de pieza: IQEH50NE2LM7UCGSCATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.65 | $26,50 |
| 100 | $2.32 | $232,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.78 | $1.780,00 |
IQEH50NE2LM7UCGSCATMA1 Descripción general
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive channel between drain and source. Power MOSFETs sit inside the broader semiconductor hierarchy: MOSFET -> discrete semiconductor -> power discrete -> switch-mode power conversion building block. Optimized low-voltage MOSFETs such as this part are routinely used as synchronous rectifiers on the secondary side of buck converters, where every milliohm of RDS(on) translates directly into conduction loss, efficiency, and thermal headroom.
Key differentiating parameters include 25 V drain-source breakdown voltage optimized for 12 V rails, 0.5 mΩ maximum on-resistance for minimum conduction loss, 175°C rated junction temperature for harsh thermal environments, and a 2 V typical gate threshold enabling low-voltage gate drive. The device dissipates 2.5 W at TA and 150 W at TC, with PCB layout on 6 cm² of copper drain area per the datasheet characterization conditions. The PG-WHTFN-9-1 package provides top-side cooling and a small footprint suitable for high-density VRM topologies.
Typical applications include AI accelerator point-of-load converters, server core voltage rails, telecom 48 V intermediate bus converters, hot-swap circuits, and OR-ing FETs in redundant power supplies. Its low RDS(on) and high current rating make it especially suitable as a synchronous rectifier where switching losses and conduction losses both matter.
When designing with this part, prioritize Kelvin-source gate drive to fully realize the 0.5 mΩ rating, and use the datasheet SOA diagram to verify operation under fault and transient conditions. PCB layout should minimize source-inductance loop area and maximize copper on the drain tab for thermal spreading.
This page synthesizes distributor inventory, parametric comparison with drop-in alternatives, and design notes not found in the manufacturer datasheet, helping engineers select and qualify the part faster.
Alternativas directas para IQEH50NE2LM7UCGSCATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IQEH50NE2LM7UCGSCATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Power Dissipation (Tc).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IQEH50NE2LM7UCGSC
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IQE220N15NM5CGSCATMA1
✅ Sustitución directa✓ En stock
$2.18 / unidad
Ver hoja de datos →BSC014NE2LSIATMA1
✅ Sustitución directa✓ En stock
$0.48 / unidad
Ver hoja de datos →ISC037N12NM6ATMA1
✅ Sustitución directa✓ En stock
$3.62 / unidad
Ver hoja de datos →ISC015N06NM5LF2ATMA1
✅ Sustitución directa✓ En stock
$2.21 / unidad
Ver hoja de datos →IQEH50NE2LM7UCGSCATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 25 V |
| Continuous Drain Current (ID) at TA | 54 A |
| Continuous Drain Current (ID) at TC | 422 A |
| RDS(on) Max | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | 2 V |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 150 W |
| Maximum Junction Temperature | 175 °C |
| Encapsulado | PG-WHTFN-9-1 (surface mount) |
| Tipo de montaje | Surface Mount |
| Series | OptiMOS 7 |
| Technology | Silicon N-Channel Power MOSFET |
Guía de configuración de pines de IQEH50NE2LM7UCGSCATMA1 pg-whtfn-9-1 (surface mount)
Configuración de pines para IQEH50NE2LM7UCGSCATMA1 (encapsulado pg-whtfn-9-1 (surface mount)). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para IQEH50NE2LM7UCGSCATMA1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Área de funcionamiento seguro
Aplicaciones típicas
IQEH50NE2LM7UCGSCATMA1 es adecuado para 6 aplicacións: AI Server Point-of-Load Converters, Data Center 48 V Intermediate Bus Converters, Telecom Hot-Swap and OR-ing FETs, Synchronous Rectification in Server VRMs, Industrial High-Current DC-DC Modules, Battery Protection and Power Path Management.
AI Server Point-of-Load Converters
The IQEH50NE2LM7UCGSCATMA1 is well matched to 12 V point-of-load (PoL) converters feeding AI accelerator cores. Its 0.5 mΩ max RDS(on) and 422 A pulsed TC current let it serve as a synchronous rectifier with very low conduction loss, while the 25 V VDS rating provides comfortable headroom above the 12 V nominal bus. The PG-WHTFN-9-1 footprint supports dense VRM layouts typical of AI accelerator boards, where every milliohm of RDS(on) directly improves efficiency and reduces thermal load.
Recomendado
Data Center 48 V Intermediate Bus Converters
For 48 V intermediate bus architectures, the IQEH50NE2LM7UCGSCATMA1 can be used on the secondary-side synchronous rectification stage where high current and low loss are mandatory. The 25 V VDS allows placement on the 12 V output side of a multi-stage IBC. Its 175°C maximum junction temperature supports sustained high-current operation in well-cooled server chassis, and the 0.5 mΩ RDS(on) keeps conduction loss manageable even at hundreds of amps.
Recomendado
Telecom Hot-Swap and OR-ing FETs
The IQEH50NE2LM7UCGSCATMA1 serves as a hot-swap or OR-ing FET on -48 V telecom distribution boards where its low RDS(on) minimizes steady-state dissipation while the 25 V class fits 12 V load-side rails. The 54 A continuous TA rating supports typical 240-360 W load circuits. PG-WHTFN-9-1's top-side thermal pad aids board-level cooling, and the Infineon OptiMOS 7 process provides tight threshold distribution for predictable current sharing across redundant supplies.
Recomendado
Synchronous Rectification in Server VRMs
The IQEH50NE2LM7UCGSCATMA1 is engineered as a synchronous rectifier (low-side FET) in multi-phase buck VRMs for server CPUs and GPUs. With 0.5 mΩ max RDS(on) and 2 V typical gate threshold, it pairs with a companion high-side MOSFET and a 3.3 V-capable gate driver. Its 175°C rating and 150 W PD at TC enable sustained high current per phase, while the surface-mount PG-WHTFN-9-1 package reduces loop inductance compared to DPAK, helping minimize switching loss.
Recomendado
Industrial High-Current DC-DC Modules
In industrial 24 V to 12 V buck modules and high-current DC-DC bricks, the IQEH50NE2LM7UCGSCATMA1 fits as the synchronous rectifier or main switch on the 12 V side. Its 0.5 mΩ RDS(on) and 422 A pulsed rating support kilowatt-class brick converters. The wide -55°C to +175°C operating range suits industrial environments, and the small PG-WHTFN-9-1 footprint allows compact brick designs while the top-side thermal pad interfaces directly to a heatsink or cold plate.
Recomendado
Battery Protection and Power Path Management
For 12 V battery management systems and power-path OR-ing in industrial UPS or e-mobility charging infrastructure, the IQEH50NE2LM7UCGSCATMA1 can be used as a low-loss disconnect FET. Its 0.5 mΩ RDS(on) minimizes steady-state voltage drop across the protection element, and the 25 V VDS comfortably exceeds 12 V battery transients. The PG-WHTFN-9-1 package provides mechanical robustness and good thermal performance for continuous conduction in power-path circuits.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IQEH50NE2LM7UCGSCATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IQEH50NE2LM7UCGSC | IQE220N15NM5CGSCATMA1 | BSC014NE2LSIATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 |
| VDS Max | 25 V | 25 V | 150 V | 25 V | 120 V | 60 V |
| RDS(on) Max | 0.5 mΩ | 0.5 mΩ | 22 mΩ | 1.4 mΩ | 3.7 mΩ | 1.5 mΩ |
| Continuous ID @ TA | 54 A | 54 A | 55 A | 40 A | 46 A | 55 A |
| PD @ TC | 150 W | 150 W | 150 W | 89 W | 83 W | 104 W |
| Max Junction Temp | 175 °C | 175 °C | 175 °C | 150 °C | 175 °C | 175 °C |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 2 | OptiMOS 6 | OptiMOS 5 LF2 |
| Target Application | AI / Data Center PoL | AI / Data Center PoL | Industrial HV | Server VRM | Industrial MV | Server / PoL |
Diferenciadores clave
- Lowest RDS(on) in the Infineon 25 V OptiMOS 7 PG-WHTFN family (frente a BSC014NE2LSIATMA1)
- 25 V VDS optimized for 12 V synchronous rectification (frente a IQE220N15NM5CGSCATMA1)
- OptiMOS 7 generation with 175°C junction rating (frente a ISC015N06NM5LF2ATMA1)
Notas de diseño
Estimated: At continuous drain current of 54 A at TA and 422 A pulsed at TC, the IQEH50NE2LM7UCGSCATMA1 dissipates substantial heat in the PG-WHTFN-9-1 package. Infineon's datasheet characterization uses a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² of 70 µm copper for the drain. For full SOA utilization, follow this minimum copper area and connect the top-side thermal pad to a copper pour or cold plate with multiple thermal vias.
Use a Kelvin-source gate drive connection to fully realize the 0.5 mΩ RDS(on) specification; sharing the source bond wire between gate-drive return and high-current return path adds ~0.2-0.4 mΩ of effective resistance and degrades efficiency at high current. Place the gate-driver and gate resistor within 5 mm of the gate pad to minimize the gate-drive loop inductance, which directly controls switching loss.
Estimated: With 2.5 W PD at TA, the package can dissipate in still air on a moderate PCB; at the 150 W TC rating, the package requires significant cooling. Use the datasheet SOA diagram to verify operation under worst-case load transients, and de-rate below 175°C maximum junction temperature - a 25-30°C margin is recommended for production reliability per typical power-electronics design practice.
Do not parallel this part with significantly different RDS(on) without adequate gate-source resistor balancing; OptiMOS 7 has positive temperature coefficient of RDS(on), but threshold voltage variation between parallel units can still cause current imbalance. Verify peak drain current under worst-case operating conditions (input surge, output short, hot-swap) against the SOA. Confirm 25 V VDS headroom above maximum bus transients in your system.
Información de cumplimiento
RoHS and lead-free status inferred from Infineon OptiMOS 7 standard product compliance per product page; AEC-Q100 automotive grade not stated in the verified distributor listings.
