IR2117STRPBF vs IRS2104STRPBF Comparación
Comparación detallada lado a lado de IR2117STRPBF por Infineon y IRS2104STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR2117STRPBF | IRS2104STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,45 |
| Configuration | High-Side Single Channel | — |
| Función | Gate Driver, Non-Inverting | — |
| Input Logic Compatibility | CMOS / TTL | — |
| Número de salidas | 1 | — |
| Driven Device | N-Channel MOSFET / IGBT | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Floating Channel Offset Voltage | up to +600 V | — |
| Peak Source Current (IOUT+) | 250 mA | — |
| Peak Sink Current (IOUT-) | 500 mA | — |
| Propagation Delay (Ton/Toff) | 125 ns (max) | — |
| Tiempo de subida | 80 ns (typ) | — |
| Tiempo de bajada | 40 ns (typ) | — |
| Undervoltage Lockout (UVLO) | Yes | — |
| Negative Transient Voltage Tolerance | Yes, dV/dt immune | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado / Carcasa | 8-SOIC (0.154 inch / 3.90 mm width) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant (PbF suffix) |
| Lead-Free | Yes | — |
| Nivel MSL | MSL3 (per JEDEC J-STD-020) | 2 (1 year floor life per datasheet) |
| Product Type | — | Half-Bridge Gate Driver IC |
| Topología | — | Half-Bridge (High-Side + Low-Side) |
| Number of Channels | — | 2 (HS + LS, dependent) |
| High-Side Offset Voltage (VS) | — | -5 V to +600 V |
| Logic Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.6 A |
| Propagation Delay (typ.) | — | 150 ns |
| Rise Time (typ.) | — | 35 ns |
| Fall Time (typ.) | — | 70 ns |
| Quiescent Current (typ.) | — | 150 uA |
| Undervoltage Protection | — | Yes (VCC and VBS UVLO) |
| Shutdown Pin | — | Yes (SD, active-low per typical usage) |
| Logic Input Compatibility | — | Standard CMOS / LSTTL |
| Temperatura de unión de funcionamiento | — | -40C to +150C |
| Encapsulado | — | 8-Lead SOIC (SOIC-8) |
| Qualification Level | — | Industrial |