IRF7313TRPBF vs IRF7342TRPBF Comparación
Comparación detallada lado a lado de IRF7313TRPBF por Infineon y IRF7342TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7313TRPBF | IRF7342TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,27 | $0,48 |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7313TRPBF | IRF7342TRPBF |
| Technology | IR MOSFET Generation V (HEXFET Fifth Generation) | HEXFET Power MOSFET (Fifth Generation), P-Channel |
| Transistor Configuration | Dual N-Channel (Independent) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max | 6.5 A per channel | — |
| On-Resistance (RDS(on)) max | 29 mOhm at VGS=10V | — |
| Power Dissipation (PD) max | 2 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: ±V rating] | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (typical range) | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55 C to +150 C (Tj) |
| Encapsulado | 8-pin SOIC (SO-8) surface mount | 8-SOIC (SO-8), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / Pbf | Yes (lead-free plating) | — |
| Avalanche Rated | Yes | — |
| Nivel MSL | 1 | — |
| Qualification Standard | Consumer market (per IR datasheet) | — |
| Shipping Media | Tape & Reel (TRPBF suffix) | — |
| Configuration | — | Dual P-Channel MOSFET Array (two independent P-FETs in one package) |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) | — | -3.4 A at 25 C |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (Vgs(th)) | — | -1.0 V to -3.0 V (typ -1.7 V) |
| Drain-Source On-Resistance (RDS(on)) | — | 0.105 ohm max at VGS = -10 V |
| Maximum Power Dissumption (Pd) | — | 2 W |
| Packaging | — | Tape and Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free, RoHS compliant) |
| Channel Type | — | P-Channel (enhancement mode) |
| Number of Channels | — | 2 (dual array) |