IRF7313TRPBF vs IRF7342TRPBF 비교

다음의 상세 나란히 비교: IRF7313TRPBF 제조: Infineon 및 IRF7342TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7313TRPBF IRF7342TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.48
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7313TRPBF IRF7342TRPBF
Technology IR MOSFET Generation V (HEXFET Fifth Generation) HEXFET Power MOSFET (Fifth Generation), P-Channel
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
동작 온도 범위 -55C to +150C (junction) -55 C to +150 C (Tj)
패키지 8-pin SOIC (SO-8) surface mount 8-SOIC (SO-8), surface mount
실장 유형 Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL 레벨 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Configuration — Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Packaging — Tape and Reel (TR)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

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