IRF7389TRPBF vs IRF7343TRPBF Comparación
Comparación detallada lado a lado de IRF7389TRPBF por Infineon y IRF7343TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7389TRPBF | IRF7343TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,62 |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | — |
| Technology | HEXFET Generation V (IR MOSFET) | IR MOSFET (HEXFET Generation V) |
| Encapsulado | 8-SO (SOIC-8) | 8-SOIC (SO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C | — |
| Avalanche Rated | Yes | — |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| Nivel MSL | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Tipo de transistor | — | N and P-Channel Complementary MOSFET Array |
| Drain-to-Source Voltage (VDS) - N-Channel | — | 55 V |
| Drain-to-Source Voltage (VDS) - P-Channel | — | 55 V |
| Continuous Drain Current (ID) - N-Channel | — | 4.7 A |
| Continuous Drain Current (ID) - P-Channel | — | 3.4 A |
| On-Resistance (RDS(on)) - N-Channel | — | 0.043 ohm (typical per chipdig.com) |
| On-Resistance (RDS(on)) max | — | 50 mOhm |
| Power Dissipation (PD) | — | 2 W |
| Lead-Free | — | Yes |
| RoHS Compliance | — | Compliant |