IRF7389TRPBF vs IRF7343TRPBF Comparison

Detailed side-by-side comparison of IRF7389TRPBF by Infineon and IRF7343TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF βœ“ Active

Specification Comparison

Parameter IRF7389TRPBF IRF7343TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.62
Transistor Polarity N and P Channel β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (N-Ch, Id) 7.3 A β€”
Continuous Drain Current (P-Ch, Id) -5.3 A β€”
On-Resistance RDS(on) Max 29 mOhm β€”
Power Dissipation (Pd) 2.5 W β€”
Configuration Dual N+P Complementary Half-Bridge β€”
Technology HEXFET Generation V (IR MOSFET) IR MOSFET (HEXFET Generation V)
Package 8-SO (SOIC-8) 8-SOIC (SO-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Avalanche Rated Yes β€”
Lead Free / RoHS Lead Free / RoHS Compliant β€”
MSL Level 1 β€”
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Status β€” Active
Transistor Type β€” N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel β€” 55 V
Drain-to-Source Voltage (VDS) - P-Channel β€” 55 V
Continuous Drain Current (ID) - N-Channel β€” 4.7 A
Continuous Drain Current (ID) - P-Channel β€” 3.4 A
On-Resistance (RDS(on)) - N-Channel β€” 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max β€” 50 mOhm
Power Dissipation (PD) β€” 2 W
Lead-Free β€” Yes
RoHS Compliance β€” Compliant

Datasheets & Resources

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