IRF7389TRPBF vs IRF7343TRPBF Vergleich
Detaillierter Direktvergleich von IRF7389TRPBF von Infineon und IRF7343TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7389TRPBF | IRF7343TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,62 |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | — |
| Technology | HEXFET Generation V (IR MOSFET) | IR MOSFET (HEXFET Generation V) |
| Gehäuse | 8-SO (SOIC-8) | 8-SOIC (SO-8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C | — |
| Avalanche Rated | Yes | — |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| MSL-Level | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Transistortyp | — | N and P-Channel Complementary MOSFET Array |
| Drain-to-Source Voltage (VDS) - N-Channel | — | 55 V |
| Drain-to-Source Voltage (VDS) - P-Channel | — | 55 V |
| Continuous Drain Current (ID) - N-Channel | — | 4.7 A |
| Continuous Drain Current (ID) - P-Channel | — | 3.4 A |
| On-Resistance (RDS(on)) - N-Channel | — | 0.043 ohm (typical per chipdig.com) |
| On-Resistance (RDS(on)) max | — | 50 mOhm |
| Power Dissipation (PD) | — | 2 W |
| Lead-Free | — | Yes |
| RoHS Compliance | — | Compliant |