IRF7769L1TRPBF vs IRFB4110PBF Comparación
Comparación detallada lado a lado de IRF7769L1TRPBF por Infineon y IRFB4110PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7769L1TRPBF | IRFB4110PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,72 | $1,55 |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) | 100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| Continuous Drain Current (TA=25C) | 20 A | — |
| Continuous Drain Current (TC=25C) | 124 A | — |
| Corriente de drenador pulsada | 142 A | — |
| Power Dissipation (TA=25C) | 3.3 W | — |
| Power Dissipation (TC=25C) | 125 W | — |
| RDS(on) max at VGS=10V | 3.5 mOhm | — |
| RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge Qg | 200 nC | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| Encapsulado | DirectFET Isometric L8 | TO-220AB (through-hole) |
| Package Profile | 0.7 mm | — |
| Tipo de montaje | Surface Mount | Through Hole |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | — |
| Nivel MSL | 1 | — |
| Lead-Free Reflow | 260C qualified | — |
| Sin halógenos | Yes | — |
| RoHS Compliance | Compliant | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Estado RoHS | — | Compliant (Pb-free suffix) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |