IRF7769L1TRPBF vs IRFB4110PBF 对比
详细并排对比 IRF7769L1TRPBF 出自 Infineon 和 IRFB4110PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7769L1TRPBF | IRFB4110PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.72 | $1.55 |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) | 100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| Continuous Drain Current (TA=25C) | 20 A | — |
| Continuous Drain Current (TC=25C) | 124 A | — |
| 脉冲漏极电流 | 142 A | — |
| Power Dissipation (TA=25C) | 3.3 W | — |
| Power Dissipation (TC=25C) | 125 W | — |
| RDS(on) max at VGS=10V | 3.5 mOhm | — |
| RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge Qg | 200 nC | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| 封装 | DirectFET Isometric L8 | TO-220AB (through-hole) |
| Package Profile | 0.7 mm | — |
| 安装类型 | Surface Mount | Through Hole |
| 工作温度范围 | -55C to +150C (TJ) | — |
| MSL 等级 | 1 | — |
| Lead-Free Reflow | 260C qualified | — |
| 无卤 | Yes | — |
| RoHS Compliance | Compliant | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| 工作结温 | — | -55 °C to +175 °C |
| RoHS 状态 | — | Compliant (Pb-free suffix) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |