IRF8734TRPBF vs IRFH5015TRPBF Comparación
Comparación detallada lado a lado de IRF8734TRPBF por Infineon y IRFH5015TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF8734TRPBF | IRFH5015TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | StrongIRFET™ (HEXFET) | IR MOSFET (HEXFET) |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.5 mOhm | — |
| Gate Charge (Qg) typ | 20 nC | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Encapsulado / Carcasa | 8-SOIC (SO-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Avalanche Energy Rating | Fully characterized avalanche voltage | — |
| Estado RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free / Halogen-Free | Lead-free (PBF suffix) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating per J-STD-020] | — |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Encapsulado | — | 8-PQFN (5x6) SuperSO8 |
| Configuration | — | Single with built-in body diode |
| Temperatura de funcionamiento | — | -55C to +150C (TJ max) |