IRFB3207ZPBF vs IPB019N08N3GATMA1 Comparación
Comparación detallada lado a lado de IRFB3207ZPBF por Infineon y IPB019N08N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΩ OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IRFB3207ZPBF | IPB019N08N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $2,74 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | OptiMOS 3 |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-220AB (3-lead through-hole) | PG-TO263-7 (D2PAK-6, surface mount) |
| Tipo de montaje | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Nivel MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 180 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.9 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V |
| Drive Voltage (Rds On Max) | — | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | — | 206 nC |
| Input Capacitance (Ciss) | — | 14.2 nF |
| Output Capacitance (Coss) | — | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | — | 3.84 nF |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| Estado RoHS | — | Compliant |