IRFB3207ZPBF vs IPB019N08N3GATMA1 Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IPB019N08N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β ActiveSpecification Comparison
| Parameter | IRFB3207ZPBF | IPB019N08N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $2.74 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFB3207ZPBF | β |
| Series | HEXFET | OptiMOS 3 |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Silicon-Limited Drain Current | 170 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissition (PD) at TC=25C | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (3-lead through-hole) | PG-TO263-7 (D2PAK-6, surface mount) |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| MSL Level | N/A (through-hole) | β |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 80 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 180 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.9 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V |
| Drive Voltage (Rds On Max) | β | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | β | 206 nC |
| Input Capacitance (Ciss) | β | 14.2 nF |
| Output Capacitance (Coss) | β | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | β | 3.84 nF |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| RoHS Status | β | Compliant |