IRFR120NTRLPBF vs IRL540NSTRLPBF Comparación
Comparación detallada lado a lado de IRFR120NTRLPBF por Infineon y IRL540NSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR120NTRLPBF | IRL540NSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,51 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±16 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | Logic-level |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ | — |
| Total Gate Charge (Qg) | 16.7 nC | 49.3 nC |
| Power Dissipation (PD) at TC=25C | 48 W | — |
| Rango de temperatura de unión de funcionamiento | -55C to +175C | — |
| Avalanche Energy Rated | Yes (fully avalanche rated) | Yes (single-pulse) |
| Encapsulado | PG-TO252-3 (DPAK) | TO-263 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant (LPBF suffix indicates lead-free) |
| Lead-Free Finish | Yes (Pb-free) | — |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |