IRFR120NTRLPBF vs IRL540NSTRLPBF Comparison

Detailed side-by-side comparison of IRFR120NTRLPBF by Infineon and IRL540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR120NTRLPBF IRL540NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.51
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 9.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] Β±16 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] Logic-level
On-Resistance RDS(on) max at VGS=10V 210 mΞ© β€”
Total Gate Charge (Qg) 16.7 nC 49.3 nC
Power Dissipation (PD) at TC=25C 48 W β€”
Operating Junction Temperature Range -55C to +175C β€”
Avalanche Energy Rated Yes (fully avalanche rated) Yes (single-pulse)
Package PG-TO252-3 (DPAK) TO-263 (D2PAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (LPBF suffix indicates lead-free)
Lead-Free Finish Yes (Pb-free) β€”
Continuous Drain Current (ID) at Tc=25Β°C β€” 36 A
On-Resistance (RDS(on)) max @ VGS=10V β€” 44 mΞ©
On-Resistance (RDS(on)) max @ VGS=5V β€” [DATA_NEEDED: RDS(on) at VGS=5V]
Power Dissipation (PD) at Tc=25Β°C β€” 140 W
Power Dissipation (PD) at TA=25Β°C β€” 3.8 W
Operating Temperature Range β€” -55Β°C to +175Β°C
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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